Structure and strength of SiC/V bonding interface

Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

Volumn 62, Issue 10, 1998, Pages 899-904

  Fukai, Takashi ^a   Naka, Masaaki ^a   Feng, J C ^a,b,c   Shuster, Julius C ^a,b,d  

^a OSAKA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c HARBIN INSTITUTE OF TECHNOLOGY   (China)

^d UNIVERSITY OF VIENNA   (Austria)

Author keywords

Ceramic metal interface; Diffusion path; Interface strength; Interface structure; Reaction mechanism; Silicon carbide; Vanadium

Indexed keywords

BONDING; DIFFUSION IN SOLIDS; FRACTURE TOUGHNESS; GRANULAR MATERIALS; INTERFACES (MATERIALS); METAL FOIL; MICROSTRUCTURE; SHEAR STRENGTH; SILICON CARBIDE; SURFACE STRUCTURE; VANADIUM; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS (EPMA); PRESSURELESS SINTERING;

CERMETS;

EID: 0032182863     PISSN: 00214876     EISSN: None     Source Type: Journal    
DOI: 10.2320/jinstmet1952.62.10_899     Document Type: Article

References (7)

1. S. Morozumi, M. Endo, M. Kikuchi and K. Hamazuma: J. Mater. Sci., 20(1985), 3976.
2. M. Naka, J. C. Feng and J. C. Schuster: Metall. Trans., 28A(1997), 1385.
3. P. Martineau, R. Pailler, M. Lahaye and R. Naslain: J. Mater. Sci., 19(1984), 2749.
4. J. C. Schuster: Structure Ceramic Joining II, Am. Ceramic Soc., (1993), 43.
5. Peason's Handbook of Crystallographic Data for Intermetallic Phases ASM Metals Park, OH, (1985), p. 3197 and p. 1587.