-
2
-
-
0006028206
-
Erbium-doped silicon and porous silicon for optoelectronics
-
G.T. Reed, A.K. Kewell, "Erbium-doped silicon and porous silicon for optoelectronics", Materials Science and Engineering B, 40, 204-215, 1996
-
(1996)
Materials Science and Engineering B
, vol.40
, pp. 204-215
-
-
Reed, G.T.1
Kewell, A.K.2
-
3
-
-
0031233221
-
Quantum confinement and interface effects on photoluminescence from silicon single quantum wells
-
S Okamoto, Y Kanemitsu, "Quantum confinement and interface effects on photoluminescence from silicon single quantum wells, Solid State Communications, 103, 573-576, 1997
-
(1997)
Solid State Communications
, vol.103
, pp. 573-576
-
-
Okamoto, S.1
Kanemitsu, Y.2
-
4
-
-
19844375984
-
2 layer
-
2 layer", Applied Physics Letters, 66, 851-853, 1995
-
(1995)
Applied Physics Letters
, vol.66
, pp. 851-853
-
-
Mutti, P.1
Ghislotti, G.2
Bertoni, S.3
Bonoldi, L.4
Cerofolini, G.F.5
Meda, L.6
Grilli, E.7
Guzzi, M.8
-
5
-
-
0035939928
-
Efficient silicon light-emitting diodes
-
M.A. Green, J.H. Zhao, A.H. Wang, P.J. Reece, M. Gal, "Efficient silicon light-emitting diodes", Nature, 412, 805-808, 2001
-
(2001)
Nature
, vol.412
, pp. 805-808
-
-
Green, M.A.1
Zhao, J.H.2
Wang, A.H.3
Reece, P.J.4
Gal, M.5
-
6
-
-
0034707054
-
Optical gain in silicon nanocrystals
-
L Pavesi, L Dal Negro, C Mazzoleni, G Franzo, F Priolo, "Optical gain in silicon nanocrystals", Nature, 408, 440-444, 2000
-
(2000)
Nature
, vol.408
, pp. 440-444
-
-
Pavesi, L.1
Dal Negro, L.2
Mazzoleni, C.3
Franzo, G.4
Priolo, F.5
-
7
-
-
0141775174
-
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
-
L.T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers", Applied Physics Letters, 57, 1046-1048, 1990
-
(1990)
Applied Physics Letters
, vol.57
, pp. 1046-1048
-
-
Canham, L.T.1
-
8
-
-
0000700644
-
Photoluminescence studies on porous silicon
-
Z.Y. Xu, M. Gal, M. Gross, "Photoluminescence studies on porous silicon", Applied Physics Letters, 60, 1375-1377, 1992
-
(1992)
Applied Physics Letters
, vol.60
, pp. 1375-1377
-
-
Xu, Z.Y.1
Gal, M.2
Gross, M.3
-
10
-
-
0036836993
-
Formation and application of porous silicon
-
H Foil, M Christophersen, J Carstensen, G Hasse, "Formation and application of porous silicon", Materials Science and Engineering R, 39, 93-141, 2002
-
(2002)
Materials Science and Engineering R
, vol.39
, pp. 93-141
-
-
Foil, H.1
Christophersen, M.2
Carstensen, J.3
Hasse, G.4
-
11
-
-
4344576629
-
-
In preparation
-
P.J. Reece, B.Q. Sun, W.H. Zheng, M. Gal, G. Lérondel, "Properties of one-dimensional photonic structures based on mesoporous silicon", In preparation, 2003
-
(2003)
Properties of One-dimensional Photonic Structures Based on Mesoporous Silicon
-
-
Reece, P.J.1
Sun, B.Q.2
Zheng, W.H.3
Gal, M.4
Lérondel, G.5
-
13
-
-
0030109445
-
Porous silicon resonant cavity light emitting diodes
-
L. Pavesi, R. Guardini, C. Mazzoleni, "Porous silicon resonant cavity light emitting diodes", Solid State Communications 97, 1051-1053, 1996
-
(1996)
Solid State Communications
, vol.97
, pp. 1051-1053
-
-
Pavesi, L.1
Guardini, R.2
Mazzoleni, C.3
-
14
-
-
0000572591
-
Erbium emission from porous silicon one-dimensional photonic band gap structures
-
H.A. Lopez, P.M. Fauchet, "Erbium emission from porous silicon one-dimensional photonic band gap structures", Applied Physics Letters, 77, 3704-3706, 2000
-
(2000)
Applied Physics Letters
, vol.77
, pp. 3704-3706
-
-
Lopez, H.A.1
Fauchet, P.M.2
-
15
-
-
0035942409
-
Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity
-
Y. Zhou, P.A. Snow, P.S.J. Russell, "Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity", Materials Science and Engineering B, 81, 40-42, 2001
-
(2001)
Materials Science and Engineering B
, vol.81
, pp. 40-42
-
-
Zhou, Y.1
Snow, P.A.2
Russell, P.S.J.3
-
16
-
-
0346704430
-
Improvement of the luminescence in p-type as-prepared or dye impregnated porous silicon microcavities
-
S. Setzu, S. Letant, P. Solsona, R. Romestain, J.C Vial, "Improvement of the luminescence in p-type as-prepared or dye impregnated porous silicon microcavities" Journal of Luminescence, 80, 129-132, 1999
-
(1999)
Journal of Luminescence
, vol.80
, pp. 129-132
-
-
Setzu, S.1
Letant, S.2
Solsona, P.3
Romestain, R.4
Vial, J.C.5
-
17
-
-
0037595558
-
Fabrication and tuning of high quality porous silicon microcavities
-
P.J. Reece, G Lérondel, J Mulders, W.H. Zheng, M. Gal "Fabrication and tuning of high quality porous silicon microcavities", Physica Status Solidi A, 197, 321-325, 2003
-
(2003)
Physica Status Solidi A
, vol.197
, pp. 321-325
-
-
Reece, P.J.1
Lérondel, G.2
Mulders, J.3
Zheng, W.H.4
Gal, M.5
-
18
-
-
0031117590
-
Influence of etch stops on the microstructure of porous silicon layers
-
S. Billat, M. Thonissen, R. ArensFischer, M. G. Berger, M. Kruger, H. Luth, "Influence of etch stops on the microstructure of porous silicon layers" Thin Solid Films, 297, 22-25, 1997
-
(1997)
Thin Solid Films
, vol.297
, pp. 22-25
-
-
Billat, S.1
Thonissen, M.2
Arensfischer, R.3
Berger, M.G.4
Kruger, M.5
Luth, H.6
-
19
-
-
0001185727
-
Study of the cracking of high porous p+ type silicon during drying
-
O. Belmont, D. Bellet, Y. Bréchet, "Study of the cracking of high porous p+ type silicon during drying", Journal of Applied Physics, 79, 7586-7591, 1996
-
(1996)
Journal of Applied Physics
, vol.79
, pp. 7586-7591
-
-
Belmont, O.1
Bellet, D.2
Bréchet, Y.3
-
20
-
-
0000904216
-
Temperature dependence and quenching processes of the intra-4f luminescence of Er in Si
-
S. Coffa, G. Franzò, F. Priolo, A. Polman, R. Serna, "Temperature dependence and quenching processes of the intra-4f luminescence of Er in Si", Physical Review B, 49, 16313-16320, 1994
-
(1994)
Physical Review B
, vol.49
, pp. 16313-16320
-
-
Coffa, S.1
Franzò, G.2
Priolo, F.3
Polman, A.4
Serna, R.5
-
21
-
-
0009293110
-
Erbium in crystal silicon: Optical activation, excitation and concentration limits
-
A. Polman, G.N. van den Hoven, J.S. Custer, J.H. Shin, R. Serna, P.F.A. Alkermade, "Erbium in crystal silicon: Optical activation, excitation and concentration limits", Journal of Applied Physics, 77, 1256-1262, 1995
-
(1995)
Journal of Applied Physics
, vol.77
, pp. 1256-1262
-
-
Polman, A.1
Van Den Hoven, G.N.2
Custer, J.S.3
Shin, J.H.4
Serna, R.5
Alkermade, P.F.A.6
-
22
-
-
0000323326
-
Light emission from porous silicon single and multiple cavities
-
E.K. Squire, P.A. Snow, P.S. Russell, L.T. Canham, A.J. Simons, C.L. Reeves "Light emission from porous silicon single and multiple cavities", Journal of Luminescence, 80, 125-128, 1998
-
(1998)
Journal of Luminescence
, vol.80
, pp. 125-128
-
-
Squire, E.K.1
Snow, P.A.2
Russell, P.S.3
Canham, L.T.4
Simons, A.J.5
Reeves, C.L.6
-
23
-
-
0027687148
-
Electrical and optical characterisation of erbium-implanted silicon: The role of impurities and defects
-
F. Priolo, S. Coffa, G. Franzò, C. Spinella, A. Carnera, V. Bellani, "Electrical and optical characterisation of erbium-implanted silicon: The role of impurities and defects", Journal of Applied Physics, 74, 4936-4942, 1993
-
(1993)
Journal of Applied Physics
, vol.74
, pp. 4936-4942
-
-
Priolo, F.1
Coffa, S.2
Franzò, G.3
Spinella, C.4
Carnera, A.5
Bellani, V.6
-
24
-
-
0000342135
-
3+ in crystalline Si
-
3+ in crystalline Si", Physical Review B, 57, 4443-4455, 1998
-
(1998)
Physical Review B
, vol.57
, pp. 4443-4455
-
-
Priolo, F.1
Franzò, G.2
Coffa, S.3
Camera, A.4
-
25
-
-
0033738087
-
3+ optical centres of the 1.54μm room-temperature emission in Er-doped porous silicon and excitation the excitation mechanism
-
3+ optical centres of the 1.54μm room-temperature emission in Er-doped porous silicon and excitation the excitation mechanism, Journal of Luminescence, 87-89, 319-322, 2000
-
(2000)
Journal of Luminescence
, vol.87
, Issue.89
, pp. 319-322
-
-
Wang, W.1
Isshiki, H.2
Yugo, S.3
Saito, R.4
Kimura, T.5
-
26
-
-
0035880824
-
Free charge carriers in mesoporous silicon
-
V.Y. Timoshenko, Th. Dittrich, V. Lysenko, M.G. Lisachenko, F. Koch, "Free charge carriers in mesoporous silicon", Physical Review B, 64, 085314-1-7, 2001
-
(2001)
Physical Review B
, vol.64
-
-
Timoshenko, V.Y.1
Dittrich, Th.2
Lysenko, V.3
Lisachenko, M.G.4
Koch, F.5
-
27
-
-
0006412205
-
Erbium implanted thin film photonic materials
-
A. Polman, "Erbium implanted thin film photonic materials", Journal of Applied Physics, 82, 1-39, 1997
-
(1997)
Journal of Applied Physics
, vol.82
, pp. 1-39
-
-
Polman, A.1
-
28
-
-
0342912452
-
Understanding and control of the erbium non-radiative de-activation processes in silicon
-
G. Franzò, F. Priolo, S. Coffa, "Understanding and control of the erbium non-radiative de-activation processes in silicon", Journal of Luminescence, 80, 19-28, 1999
-
(1999)
Journal of Luminescence
, vol.80
, pp. 19-28
-
-
Franzò, G.1
Priolo, F.2
Coffa, S.3
-
29
-
-
0033149152
-
Photoluminescence of erbium-doped silicon: Excitation power dependence
-
C.AJ. Ammerlaan, D.T.X. Thao, T. Gregorkiewicz, N.A. Sobolev, "Photoluminescence of erbium-doped silicon: excitation power dependence", Semiconductors, 33, 598-602, 1999
-
(1999)
Semiconductors
, vol.33
, pp. 598-602
-
-
Ammerlaan, C.A.J.1
Thao, D.T.X.2
Gregorkiewicz, T.3
Sobolev, N.A.4
|