Fabrication and tuning of high quality porous silicon microcavities

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 2, 2003, Pages 321-325

  Reece, P J ^a   Lerondel, G ^a,b   Mulders, J ^a   Zheng, W H ^a   Gal, M ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITÉ DE TECHNOLOGIE DE TROYES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; DOPING (ADDITIVES); HEAT TREATMENT; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; POROSITY; REFRACTIVE INDEX; SILICON WAFERS;

MICROCAVITIES; OPTICAL STRUCTURE; REDUCED INTERFACE FLUCTUATIONS;

POROUS SILICON;

EID: 0037595558     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306517     Document Type: Conference Paper

References (19)

1. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1-126 (2000).
2. W. Theiss, S. Henkel, and M. Arntzen, Thin Solid Films 255, 177 (1995).
3. C. Wilmsen, H. Temkin, and L. A. Coldren, Vertical-Cavity Surface Emitting Lasers, (New York, Cambridge University Press, 1999).
4. S. Frohnhoff and M. G. Berger, Adv. Mater. 6, 963 (1994).
5. Minoru Araki, Hideki Koyama, and Nobuyoshi Koshida, Appl. Phys. Lett. 69, 2956 (1996).
6. Y. Yamamoto, Semiconductor cavity quantum electrodynamics, (Springer, Berlin, 2000).
7. L. Pavesi, R. Guardini, and C. Mazzoleni, Solid State Commun. 97, 1051 (1996).
8. S. Setzu, S. Letant, P. Solsona, R. Romestain, and J. C. Vial, J. Lumin. 80, 129 (1999).
9. H. A. Lopez and P. M. Fauchet, Appl. Phys. Lett. 77, 3704 (2000).
10. L. Pavesi and P. Dubos, Semicond. Sci. Technol. 12, 570 (1997).
11. See for review on porous silicon formation by anodisation, A. Halimaoui, Properties of Porous Silicon, emis Datareviews series 18 inspec editions, edited by L. Canham, Chap. 1.2, p 12. (1997).
12. S. Billat, M. Thonissen, R. Arens-Fischer, M. G. Berger, M. Kruger, and H. Luth, Thin Solid Films 297, (1-2): 22 (1997).
13. O. Belmont, D. Bellet, and Y. Bréchet, J. Appl. Phys. 79, (10), 7586 (1996).
14. L. Landau and E. Lifchitz, Électrodynamique des Milieux Continus, Vol. 8, Chap. X, p. 417 (1960).
15. E. K. Squire, P. A. Snow, P. St. Russel, L. T. Canham, A. J. Simons, and C. L. Reeves, J. Lumin. 80, 125 (1990).
16. S. Setzu, G. Lerondel, and R. Romestain, J. Appl. Phys. 84, 3129 (1998).
17. G. Lérondel and R. Romestain, Properties of Porous Silicon, emis Datareviews series 18 inspec editions, edited by L. Canham, Chap. 8.5, 241 (1997).
18. G. Lérondel, R. Romestain, and S. Barret, J. Appl. Phys. 81, 6171 (1997).
19. D. Buttard, G. Dolino, C. Faivre, A. Halimaoui, F. Comin, V. Formoso, and L. Ortega, J. Appl. Phys. 85, (10) 7105 (1999).