Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

Materials Chemistry and Physics

Volumn 59, Issue 1, 1999, Pages 91-95

  Lin, Y S ^a   Hsu, W C ^a   Lu, S Y ^a   Su, J S ^a   Lin, W ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b LandMark Optoelectronics Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CURRENT GAIN; HETEROJUNCTION EMITTER BIPOLAR TRANSISTORS; OFFSET VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032654469     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(99)00029-2     Document Type: Article

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