Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer

Applied Physics Letters

Volumn 75, Issue 22, 1999, Pages 3551-3553

  Lin, Y S ^a   Hsu, W C ^a   Yang, C S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013230149     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125385     Document Type: Article

References (12)

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