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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1406-1409

Hydrogen pressure dependence of trench corner rounding during hydrogen annealing

(4) Kuribayashi, Hitoshi a Shimizu, Ryosuke a Sudoh, Koichi b Iwasaki, Hiroshi b

a FUJI ELECTRIC CO (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN ANNEALING; HYDROGEN PRESSURE; SEMICONDUCTOR PROCESSES; TRENCHES;

ANNEALING; COMPUTER SIMULATION; ETCHING; MOSFET DEVICES; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE DISTRIBUTION;

HYDROGEN;

EID: 4344590106 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1760752 Document Type: Conference Paper

Times cited : (20)

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