Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs

Solid-State Electronics

Volumn 48, Issue 12, 2004, Pages 2243-2249

  Tilke, Armin T ^a   Rothenhäußer, Steffen ^a   Rochel, Markus ^a   Stahrenberg, Knut ^a   Goller, Klaus ^a   Junge, Axel ^a   Pribil, Andreas ^a   Föste, Bernd ^a   Wiedemann, Jörg ^a   Tegeler, Martin ^a   Berkner, Jörg ^a   Wagner, Cajetan ^a   Dahl, Claus ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

BiCMOS; Bipolar; Integrated circuits; SiGe

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; BIPOLAR TRANSISTORS; CAPACITORS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; WIRELESS TELECOMMUNICATION SYSTEMS;

GATE OXIDATION; LOW OHMIC POLY RESISTORS; PROCESS INTEGRATION;

CMOS INTEGRATED CIRCUITS;

EID: 4344561655     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.04.014     Document Type: Article

References (13)

1. Rieh J.-S., Jagannathan B., Chen H., Schonenberg K.T., Angell D., Chinthakindi A., et al. SiGe HBTs with cut-off frequency of 350 GHz. IEDM Tech. Dig. 2002.
2. Kuhn K., Agostinelli M., Ahmed S., Chambers S., Cea S., Christensen S., et al. A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS precision R-L-C elements and 1 μm 6T SRAM Cell. IEDM Tech. Dig. 2002.
3. Hashimoto T., Nonaka Y., Saito T., Sasahara K., Tominari T., Sakai K., et al. Integration of a 0.13-μm CMOS and a high performance self-aligned SiGe HBT featuring low base resistance. IEDM Tech. Dig. 2002.
4. Knoll D., Ehwald K.E., Heinemann B., Fox A., Blum K., Rücker H., et al. A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module. IEDM Tech. Dig. 2002.
5. Szmyd D., Brock R., Bell N., Harker S., Patrizi G., Fraser J., et al. QUBiC4: a silicon RF-BiCMOS technology for wireless communication ICs. BCTM Tech. Dig. 2001.
6. max=70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5Gb/s optical networking and emerging wireless applications up to 20 GHz BCTM Tech. Dig. 2002.
7. Baudry H., Martinet B., Fellous C., Kermarrec O., Campidelli Y., Laurens M., et al. High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy. BCTM Tech. Dig. 2001.
8. Böck J., Knapp H., Aufinger K., Meister T.F., Wurzer M., Boguth S., et al. High-performance implanted base silicon bipolar technology for RF applications. IEEE Trans. Electron Devices. 48:2001;2514.
9. Wolf K., Klein W., Elbel N., Berthold A., Gröndahl S., Huttner Th., et al. SiGe-HBTs for bipolar and BiCMOS-applications: from research to ramp up of production. IEICE Trans. Electron. E84:2001;1399.
10. Böck J., Schäfer H., Knapp H., Zöschg D., Aufinger K., Wurzer M., et al. Sub 5ps SiGe bipolar technology. IEDM Tech. Dig. 2002.
11. Wolstenholme G.R., Jorgensen N., Ashburn P., Booker G.R. An investigation on the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations. J. Appl. Phys. 61:1987;225.
12. Burghartz J.N., Sun J.Y.-C., Stanis C.L., Mader S.R., Warnock J.D. Identification of perimeter depletion and emitter plug effects in deep-submicrometer shallow-junction polysilicon emitter bipolar transistors. IEEE Trans. Electron Devices. 39:1992;1477.
13. Ronsheim P.A., Cunningham B., Dupuis M.D. Characterization of polycrystalline silicon-single-crystal silicon interfaces and correlation to bipolar transistor device data. J. Appl. Phys. 69:1991;495.