Tuning the band structures of single walled silicon carbide nanotubes with uniaxial strain: A first principles study

Applied Physics Letters

Volumn 92, Issue 18, 2008, Pages

  Wang, Zhiguo ^a   Zu, Xiaotao ^a   Xiao, Haiyan ^a   Gao, Fei ^b   Weber, William J ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; ELECTRONIC STRUCTURE; ENERGY GAP; SILICON CARBIDE;

MECHANICAL STRAIN; SILICON CARBIDE NANOTUBES; UNIAXIAL STRAIN;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 43349091768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2924307     Document Type: Article

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