Tunable laser diodes with type II superlattice in the tuning region

Semiconductor Science and Technology

Volumn 13, Issue 7, 1998, Pages 801-805

  Neber, S ^a   Amann, M C ^b  

^a UNIVERSITY OF KASSEL   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON TRAPS; ENERGY GAP; HOLE TRAPS; LASER TUNING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

BANDGAP; CONTINUOUSLY TUNABLE LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 0032115847     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/7/025     Document Type: Article

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