Structural and optical properties of silicon nitride film generated on Si substrate by low energy ion implantation

EPJ Applied Physics

Volumn 42, Issue 2, 2008, Pages 103-107

  Dorranian, D ^a   Azadfar, P ^b   Sari, A H ^a   Ghorbani, S ^b   Hojabri, A ^b   Ghoranneviss, M ^a  

^a ISLAMIC AZAD UNIVERSITY   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVES; ION BEAMS; ION IMPLANTATION; OPTICAL PROPERTIES; SILICON WAFERS;

DEFECT LEVELS; RMS ROUGHNESS; SILICON NITRIDE FILM;

SILICON NITRIDE;

EID: 43149104936     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap:2008039     Document Type: Article

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