Characterization of stoichiometric surface and buried SiN films fabricated by ion implantation using extended x-ray absorption fine structure

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 2720-2727

  Paloura, E C ^a   Lioutas, C ^a   Markwitz, A ^b  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b GOETHE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012737801     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363189     Document Type: Article

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