Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 667-669

  Otto, G ^a   Hobler, G ^a   Palmetshofer, L ^b   Mayerhofer, K ^a   Piplits, K ^a   Hutter, H ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

Dose rate effect; Ion implantation; Radiation damage; Silicon

Indexed keywords

ION IMPLANTATION; NITROGEN; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; SILICON; THERMAL EFFECTS;

DAMAGE FORMATION; DOSE-RATE EFFECTS; NITROGEN TEMPERATURE; PROFILE MEASUREMENTS;

DOSIMETRY;

EID: 28544442327     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.140     Document Type: Conference Paper

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