Ion beam characterization of rf-sputter deposited AlN films on Si(1 1 1)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1522-1526

  Matsunami, N ^a   Venkatachalam, S ^a   Tazawa, M ^b   Kakiuchida, H ^b   Sataka, M ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

AlN thin film on Si(1 1 1); Crystalline quality and orientation; Impurities

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; FILM GROWTH; ION BEAMS; SPUTTER DEPOSITION;

CRYSTALLINE QUALITY; NUCLEAR REACTION ANALYSIS (NRA); RF-SPUTTER DEPOSITION;

THIN FILMS;

EID: 43049162824     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.12.086     Document Type: Article

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