Interface study of AlN grown on Si substrates by radio-frequency magnetron reactive sputtering

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 336-341

  Zhang, J X ^a   Chen, Y Z ^a   Cheng, H ^a   Uddin, A ^a   Yuan, Shu ^a   Pita, K ^b   Andersson, T G ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Aluminum nitride; Interface; Sputtering

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; REFRACTIVE INDEX; SILICON; SUBSTRATES; SURFACE ROUGHNESS; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GAN FILMS; MAGNETRON REACTIVE SPUTTERING; MICROELECTRONIC CIRCUITS;

THIN FILMS;

EID: 10644294857     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.161     Document Type: Article

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