Spectroscopic ellipsometry analysis of GaAs1 - xNx layers grown by molecular beam epitaxy

Materials Science and Engineering C

Volumn 28, Issue 5-6, 2008, Pages 640-644

  Sedrine, N Ben ^a   Rihani, J ^a   Stehle, J L ^b   Harmand, J C ^c   Chtourou, R ^a  

^a Centre de Recherches et des Technologies de l'Energie   (Tunisia)

^b SOPRA   (France)

^c CNRS   (France)

Author keywords

Critical points; GaAs1 xNx; Molecular beam epitaxy; Spectroscopic ellipsometry

Indexed keywords

DIELECTRIC MATERIALS; MOLECULAR BEAM EPITAXY; NITROGEN; RAPID THERMAL ANNEALING; SPECTROSCOPIC ELLIPSOMETRY;

CRITICAL POINTS; DIELECTRIC FUNCTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 42949128513     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2007.10.008     Document Type: Article

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