Optical characterization of metalorganic vapor-phase epitaxy-grown GaAs1-xNx alloys using spectroscopic ellipsometry

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 481-484

  Matsumoto, S ^a   Yaguchi, H ^a   Kashiwase, S ^a   Hashimoto, T ^a   Yoshida, S ^a   Aoki, D ^b   Onabe, K ^b  

^a SAITAMA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELLIPSOMETRY; ENERGY GAP; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES;

GALLIUM ARSENIC NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034499890     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00748-X     Document Type: Article

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