Optimum indium concentration for growth of 1.3 μm InAs/In xGa1-xas quantum dots in a well

Chinese Physics Letters

Volumn 24, Issue 11, 2007, Pages 3260-3263

  Wang, Chong ^a,b   Liu, Zhao Lin ^b   Chen, Xue Mei ^c   Xia, Chang Sheng ^b   Zhang, Shu ^a   Yang, Yu ^a   Lu, Wei ^b  

^a YUNNAN UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c KUNMING INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; III-V SEMICONDUCTORS; INDIUM; MOLECULAR BEAM EPITAXY; NANOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS;

1.3 ΜM; BLUE SHIFT; DOT DENSITY; DOT IN A WELLS; DOTS IN A WELLS; INDIUM CONCENTRATION; PIEZOREFLECTANCE; SOLID SOURCE MOLECULAR BEAM EPITAXY;

INDIUM ARSENIDE;

EID: 36249011893     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/11/065     Document Type: Article

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