Self-organized strain engineering on GaAs (311)B: Template formation for quantum dot nucleation control

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3254-3256

  Gong, Q ^a   Notzel R ^a   Hamhuis, G J ^a   Eijkemans, T J ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSFER; GAAS; GROWTH INSTABILITY; INAS QUANTUM DOTS; LATERAL STRAIN DISTRIBUTION; MATRIX; NUCLEATION AND GROWTH; QUANTUM DOT NUCLEATION; STRAIN ENGINEERING; STRUCTURAL AND OPTICAL PROPERTIES; TEMPLATE FORMATION;

GALLIUM ARSENIDE; INDIUM ARSENIDE; NUCLEATION; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79955986455     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1516637     Document Type: Article

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