SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2652-2656

Thin film silicon devices deposited at 100 °C: A study on the structural order of the photoactive layer

(4) Rath, J K a Schropp, R E I a Roca i Cabarocas, Pere b Tichelaar, F D c

a UTRECHT UNIVERSITY (Netherlands)

b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

c DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

Chemical vapor deposition; Ellipsometry; Medium range order; Nanocrystals; Photovoltaics; Plasma deposition; Raman spectroscopy; Short range order; Silicon; Solar cells; TEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; NANOCRYSTALS; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; RAMAN SPECTROSCOPY; SILICON; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY;

MEDIUM RANGE ORDER; SHORT RANGE ORDER; STRUCTURAL DISORDER;

THIN FILM DEVICES;

EID: 42649125249 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2007.10.066 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.