Temperature dependence of electrical and electromechanical properties of Pb(Mg1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-Pb(Zr,Ti)O3 thin films

Ceramics International

Volumn 34, Issue 4, 2008, Pages 961-965

  Maiwa, Hiroshi ^a   Kim, Seung Hyun ^b  

^a SHONAN INSTITUTE OF TECHNOLOGY   (Japan)

^b INOSTEK Inc   (South Korea)

Author keywords

A. Films; C. Ferroelectric properties; C. Piezoelectric properties; E. Actuators

Indexed keywords

ACTUATORS; HYSTERESIS; PERMITTIVITY; PIEZOELECTRICITY; POLARIZATION; SCANNING PROBE MICROSCOPY; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES; PIEZOELECTRIC COEFFICIENTS; PIEZOELECTRIC PROPERTIES; ROOM TEMPERATURE;

LEAD COMPOUNDS;

EID: 42649103673     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.045     Document Type: Article

References (14)

1. Muralt P. PZT thin films for microsensors and actuators: where do we stand?. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 47 (2000) 903-915
2. Kholkine A.L., Wuetchrich C., Taylor D.V., and Setter N. Interferometric measurements of electric field-induced displacements in piezoelectric thin films. Rev. Sci. Instrum. 67 (1996) 1935-1941
3. 3 thin films. Appl. Phys. Lett. 70 (1997) 1378-1380
4. Maiwa H., Kim S.-H., and Ichinose N. Temperature dependence of the electromechanical properties of lead zirconate and titanate films. Appl. Phys. Lett. 83 (2003) 4298-4396
5. 3 single crystals. Jpn. J. Appl. Phys. 21 (1982) 1298-1304
6. 3 morphotropic phased boundary. Ferroelectr. Lett. 12 (1990) 63-68
7. Park S.E., and Shrout T.R. Characteristics of relaxor-based piezoelectric single crystals for ultrasonic transducers. IEEE Trans. Ultrason. Ferroelectr. Freq. Control 44 (1997) 1140-1146
8. Jaffe B., Cook W.R., and Jaffe H. Piezoelectric Ceramics (1962), R.A.N. Publications, Mineola, NY
9. 3 (10%) relaxor thin films. Appl. Phys. Lett. 77 (2000) 438-440
10. Park J.H., Xu F., and Trolier-Mckinstry S. Dielectric and piezoelectric properties of sol-gel derived lead magnesium niobium titanate films with different texture. J. Appl. Phys. 89 (2001) 568-574
11. 3 thin films. J. Appl. Phys. 90 (2001) 4682-4689
12. 3 thin films made by pulsed laser deposition. J. Appl. Phys. 91 (2002) 6200-6202
13. 3 (50%) thin films preparaed by chemical solution deposition. Jpn. J. Appl. Phys. 45 (2006) 850-854
14. 3 thin films for piezo-microelectromechanical system devices. Jpn. J. Appl. Phys. 42 (2003) 5952-5955