Effect of hydration on the properties of lanthanum oxide and lanthanum aluminate thin films

Ceramics International

Volumn 34, Issue 4, 2008, Pages 957-960

  Jun, Jin Hyung ^a   Kim, Hyo June ^a   Choi, Doo Jin ^a  

^a Yonsei University   (South Korea)

Author keywords

C. Dielectric properties; Gate oxide; High k material; Hydration

Indexed keywords

CURRENT DENSITY; DIELECTRIC PROPERTIES; FILM THICKNESS; HYDRATION; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; OXIDE FILMS;

ALUMINATE FILMS; GATE OXIDES; HIGH K MATERIALS; LANTHANUM ALUMINATE; LANTHANUM OXIDE; RAPID DISSOLUTION;

THIN FILMS;

EID: 42649092130     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.072     Document Type: Article

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