Microscopic study of the H2O vapor treatment of the silicon grain boundaries

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2310-2313

  Honda, S ^a   Mates, T ^a   Rezek, B ^a   Fejfar, A ^a   Kocka J ^a  

^a INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Crystalline disorder; Defects; H2O vapor treatment; Kelvin force microscopy; Micro Raman spectroscopy; Passivation; Polycrystalline silicon films; Potential; Stress

Indexed keywords

GRAIN BOUNDARIES; HYDROGEN; POLYSILICON; RAMAN SPECTROSCOPY; THIN FILMS;

INTERNAL STRESS; KELVIN FORCE MICROSCOPY; POTENTIAL CHANGE;

WATER VAPOR;

EID: 42649091449     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2007.09.107     Document Type: Article

References (10)

1. Honda S., Fejfar A., Kočka J., Ogane A., Uraoka Y., and Fuyuki T. J. Non-Cryst. Solids 352 (2006) 955
2. H. Matsumura, K. Ohdaira, M. Fukuda, Y. Abe, N. Usami, K. Nakajima, T. Karasawa, T. Torikai, In: Proceedings of the 21st European Photovoltaic Solar Energy Conference (2006) Dresden, Germany.
3. Chen J., Yang D., Xi Z., and Sekiguchi T. Physica B 364 (2005) 162
4. Yamazaki T., Uraoka Y., and Fuyuki T. Thin Solid Films 487 (2005) 26
5. Secco d'Aragona F. J. Electrochem. Soc. 119 (1972) 948
6. Honda S., Mates T., Ledinský M., Oswald J., Fejfar A., Kočka J., Yamazaki T., Uraoka Y., and Fuyuki T. Thin Solid Films 487 (2005) 152
7. Rau B., Petter K., Sieber I., Stöger-Pollach M., Eyidi D., Schattschneider P., Gall S., Lips K., and Fuhs W. J Cryst. Growth 287 (2006) 433
8. Imaizumi M., Ito T., Yamaguchi M., and Kaneko K. J. Appl. Phys. 81 (1997) 7635
9. Sakamoto K., and Sameshima T. Jpn. J. Appl. Phys. 39 (2000) 2492
10. Arafune K., Sasaki T., Wakabayashi F., Terada Y., Ohshita Y., and Yamaguchi M. Physica B: Condensed Matter 376&377 (2006) 236