Large grain polycrystalline Si thin films by nucleation-controlled chemical vapor deposition using intermittent source gas supply

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 26-30

  Yamazaki, Tsutomu ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Chemical vapor deposition; Grain boundary; Passivation; Polycrystalline silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NUCLEATION; PASSIVATION; POLYSILICON;

CARRIER TRANSPORT; INTERMITTENT GAS SUPPLY; NUCLEATION CONTROL; NUCLEATION DENSITY;

THIN FILMS;

EID: 22944445145     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.029     Document Type: Conference Paper

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