SCOPUS 정보 검색 플랫폼

Volumn 91, Issue 3, 2008, Pages 411-413

Influence of excess Si distribution in the gate oxide on the memory characteristics of MOSFETs

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DATA STORAGE EQUIPMENT; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES;

ERASE CYCLES; GATE OXIDE; MEMORY CHARACTERISTICS;

SILICON;

EID: 42449154576 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4450-1 Document Type: Article

Times cited : (3)

References (14)

1
- 33645699128
- C. Lee, A. Gorur-Seetharam, E.C. Kan, IEEE IEDM Tech. Dig. 557 (2003)
- (2003) IEEE IEDM Tech. Dig. , pp. 557
- Lee, C.¹ Gorur-Seetharam, A.² Kan, E.C.³

2
- 0029516376
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, Chan Wei, D. Buchanan, IEEE IEDM Tech. Dig. 521 (1995)
- (1995) IEEE IEDM Tech. Dig. , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Wei, C.⁵ Buchanan, D.⁶

3
- 3042765890
- R.F. Steimle, M. Sadd, R. Muralidhar, R. Rao, B. Hradsky, S. Straub, B.E. White Jr., IEEE Trans. Nanotechnol. 2, 335 (2003)
- (2003) IEEE Trans. Nanotechnol. , vol.2 , pp. 335
- Steimle, R.F.¹ Sadd, M.² Muralidhar, R.³ Rao, R.⁴ Hradsky, B.⁵ Straub, S.⁶ White Jr., B.E.⁷

4
- 0038782327
- B. Garrido, S. Cheylan, O. Gonzalez-Varona, A. Perez-Rodriguez, J.R. Morante, Appl. Phys. Lett. 82, 4818 (2003)
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4818
- Garrido, B.¹ Cheylan, S.² Gonzalez-Varona, O.³ Perez-Rodriguez, A.⁴ Morante, J.R.⁵

5
- 0000298224
- S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, K. Chan, Appl. Phys. Lett. 68, 1377 (1996)
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1377
- Tiwari, S.¹ Rana, F.² Hanafi, H.³ Hartstein, A.⁴ Crabbe, E.F.⁵ Chan, K.⁶

6
- 33744810856
- S.S. Kim, W.-J. Cho, C.-G. Ahn, K. Im, J.-H. Yang, I.-B. Baek, S. Lee, K.S. Lim, Appl. Phys. Lett. 88, 223502 (2006)
- (2006) Appl. Phys. Lett. , vol.88 , pp. 223502
- Kim, S.S.¹ Cho, W.-J.² Ahn, C.-G.³ Im, K.⁴ Yang, J.-H.⁵ Baek, I.-B.⁶ Lee, S.⁷ Lim, K.S.⁸

7
- 33644921754
- C.Y. Ng, T.P. Chen, D. Sreeduth, Q. Chen, L. Ding, A. Du, Thin Solid Films 504, 25 (2006)
- (2006) Thin Solid Films , vol.504 , pp. 25
- Ng, C.Y.¹ Chen, T.P.² Sreeduth, D.³ Chen, Q.⁴ Ding, L.⁵ Du, A.⁶

8
- 33645750547
- Y. Liu, T.P. Chen, C.Y. Ng, L. Ding, M.S. Tse, S. Fung, A.A. Tseng, IEEE Trans. Electron Dev. 53, 914 (2006)
- (2006) IEEE Trans. Electron Dev. , vol.53 , pp. 914
- Liu, Y.¹ Chen, T.P.² Ng, C.Y.³ Ding, L.⁴ Tse, M.S.⁵ Fung, S.⁶ Tseng, A.A.⁷

9
- 20844437726
- C.Y. Ng, T.P. Chen, M.S. Tse, V.S.W. Lim, S. Fung, A.A. Tseng, Appl. Phys. Lett. 86, 1 (2005)
- (2005) Appl. Phys. Lett. , vol.86 , pp. 1
- Ng, C.Y.¹ Chen, T.P.² Tse, M.S.³ Lim, V.S.W.⁴ Fung, S.⁵ Tseng, A.A.⁶

10
- 0347134642
- T. Torchynska, F.G.B. Espinoza, Y. Goldstein, E. Savir, J. Jedrzejewski, L. Khomenkova, N. Korsunska, V. Yukhimchuk, Physica B 340, 1119 (2003)
- (2003) Physica B , vol.340 , pp. 1119
- Torchynska, T.¹ Espinoza, F.G.B.² Goldstein, Y.³ Savir, E.⁴ Jedrzejewski, J.⁵ Khomenkova, L.⁶ Korsunska, N.⁷ Yukhimchuk, V.⁸

11
- 0024105541
- S. Furukawa, T. Miyasato, Japan. J. Appl. Phys. 27, 2207 (1988)
- (1988) Japan. J. Appl. Phys. , vol.27 , pp. 2207
- Furukawa, S.¹ Miyasato, T.²

12
- 33645731534
- C.Y. Ng, T.P. Chen, M. Yang, J.B. Yang, L. Ding, C.M. Li, A. Du, A. Trigg, IEEE Trans. Electron Dev. 53, 663 (2006)
- (2006) IEEE Trans. Electron Dev. , vol.53 , pp. 663
- Ng, C.Y.¹ Chen, T.P.² Yang, M.³ Yang, J.B.⁴ Ding, L.⁵ Li, C.M.⁶ Du, A.⁷ Trigg, A.⁸

13
- 33846507623
- R. Ohba, N. Sugiyama, K. Uchida, J. Koga, A. Toriumi, IEEE IEDM Tech. Dig. 313 (2000)
- (2000) IEEE IEDM Tech. Dig. , pp. 313
- Ohba, R.¹ Sugiyama, N.² Uchida, K.³ Koga, J.⁴ Toriumi, A.⁵

14
- 33645635420
- C.Y. Ng, T.P. Chen, L. Ding, S. Fung, IEEE Electr. Dev. Lett. 27, 231 (2006)
- (2006) IEEE Electr. Dev. Lett. , vol.27 , pp. 231
- Ng, C.Y.¹ Chen, T.P.² Ding, L.³ Fung, S.⁴

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