Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2427-2431

  Park, Ho Jin ^a   Kim, Jongho ^a   Kim, Min Su ^a   Kim, Do Yeob ^a   Kim, Jong Su ^b   Kim, Jin Soo ^c   Son, J S ^d   Ryu, H H ^a   Cho, Guan Sik ^a   Jeon, Minhyon ^a   Leem, J Y ^a  

^a Inje University   (South Korea)

^b Advanced Photonics Research Institute (APRI)   (South Korea)

^c Chonbuk National University   (South Korea)

^d Kyungwoon University   (South Korea)

Author keywords

A1. Capacitance voltage; A1. Hall effect; A1. Segregation effect; A3. Molecular beam epitaxy; B1. Magnesium; B2. Semiconducting gallium arsenide

Indexed keywords

CAPACITANCE; DEPTH PROFILING; DOPING (ADDITIVES); EPITAXIAL LAYERS; MAGNESIUM; MOLECULAR BEAM EPITAXY; SURFACE SEGREGATION; VOLTAGE MEASUREMENT;

CAPACITANCE VOLTAGE; DOPING DENSITY; SEGREGATION EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 42449141812     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.064     Document Type: Article

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