Erratum: Expression of concern: Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001 (Properties of Mg doped GaAs grown by molecular beam epitaxy (2001) 226(1) (52–56), (S0022024801013641), (10.1016/S0022-0248(01)01364-1));Properties of Mg doped GaAs grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 226, Issue 1, 2001, Pages 52-56

  Kim, Jong Su ^a   Bae, I H ^a   Leem, J Y ^b   Noh, S K ^b   Lee, J I ^b   Kim, J S ^b   Kim, S M ^b   Son, J S ^c   Jeon, Minhyon ^d  

^a Yeungnam University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Kyungwoon University   (South Korea)

^d Inje University   (South Korea)

Author keywords

A1. Doping; A1. Magnesium; A3. Molecular beam epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

CARRIER CONCENTRATION; ENERGY GAP; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

BANDGAP RENORMALIZATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035369985     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2021.126038     Document Type: Erratum

References (21)

1. Akasaki
2. Many-Particle Physics
3. Optical Processes in Semiconductors