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Journal of Crystal Growth

Volumn 196, Issue 1, 1999, Pages 26-32

Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: Structural and optical properties

(4) Xu, J a Towe, E a Yuan, Q b Hull, R b

a UNIVERSITY OF VIRGINIA (United States)

b University of Virginia (United States)

Author keywords

Amphotericity; Be doping; High index surfaces; Modulators; Quantum wells

Indexed keywords

BERYLLIUM; LIGHT ABSORPTION; LUMINESCENCE OF SOLIDS; MODULATORS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

AMPHOTERICITY; HIGH-INDEX SURFACES;

HETEROJUNCTIONS;

EID: 0032761092 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00871-9 Document Type: Article

Times cited : (9)

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