RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 84-88

  Leem, Jae Young ^a   Lee, Cheul Ro ^a   Noh, Sam Kyu ^a   Son, Jeong Sik ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Yeungnam University   (South Korea)

Author keywords

GaAs; Pseudomorphic InGaAs strained layers; RHEED oscillations

Indexed keywords

PRESSURE EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUBSTRATES; THERMAL EFFECTS;

BEAM EQUIVALENT PRESSURE; PSEUDOMORPHIC STRAINED LAYERS;

SEMICONDUCTOR GROWTH;

EID: 0033079332     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00939-7     Document Type: Article

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