Electronically driven structure changes of Si captured by femtosecond electron diffraction

Physical Review Letters

Volumn 100, Issue 15, 2008, Pages

  Harb, Maher ^a   Ernstorfer, Ralph ^a   Hebeisen, Christoph T ^a   Sciaini, Germán ^a   Peng, Weina ^b   Dartigalongue, Thibault ^a   Eriksson, Mark A ^b   Lagally, Max G ^b   Kruglik, Sergei G ^a   Miller, R J Dwayne ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; POTENTIAL ENERGY; RELAXATION PROCESSES; SCATTERING;

DENSITY OF CARRIERS; ELECTRON PULSES; FEMTOSECOND ELECTRON DIFFRACTION; STRUCTURE CHANGES;

POLYSILICON;

EID: 42449095083     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.155504     Document Type: Article

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