XPS characterisation of neodymium gallate wafers

Journal of Alloys and Compounds

Volumn 377, Issue 1-2, 2004, Pages 259-267

  Talik, E ^a   Kruczek, M ^a,b   Sakowska, H ^b   Ujma, Z ^a   Gala M ^b   Neumann, M ^c  

^a UNIVERSITY OF SILESIA   (Poland)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^c UNIVERSITY OF OSNABRÜCK   (Germany)

Author keywords

Electronic state; Photoelectron spectroscopy; Single crystal

Indexed keywords

COMPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; LATTICE CONSTANTS; RAW MATERIALS; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRONIC STATES; NEODYMIUM GALLATE WAFERS;

NEODYMIUM COMPOUNDS;

EID: 4243196877     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.01.037     Document Type: Article

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