GaN epitaxial growth on neodium gallate substrates

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 263-266

  Okazaki, H ^a   Arakawa, A ^a   Asahi, T ^a   Oda, O ^a   Aiki, K ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; LIGHT EMISSION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; VAPOR PHASE EPITAXY;

BAND EDGE EMISSION; NEODIUM GALLATE SUBSTRATES;

SEMICONDUCTING FILMS;

EID: 0031077716     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00213-4     Document Type: Article

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