Detectability and printability of EUVL mask blank defects for the 32 nm HP node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6730, Issue , 2007, Pages

  Cho, Wonil ^a   Han, Hak Seung ^a   Goldberg, Kenneth A ^b   Kearney, Patrick A ^a   Jeon, Chan Uk ^a  

^a SEMATECH   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Defect printability; EUV mask blank defect; EUV mask blank inspection; EUVL

Indexed keywords

DEFECTS; EXTREME ULTRAVIOLET LITHOGRAPHY; INSPECTION; PRINTED CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; WSI CIRCUITS;

DEFECT PRINTABILITY; EUV MASK BLANK DEFECTS; EUV MASK BLANK INSPECTION; PROGRAMMED DEFECTS;

MASKS;

EID: 42149178856     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.746698     Document Type: Conference Paper

References (8)

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