InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6894, Issue , 2008, Pages

  Dupuis, Russell D ^a,b   Limb, Jae B ^a   Liu, Jianping ^a   Ryou, Jae Hyun ^a   Horne, Clarissa ^a   Yoo, Dongwon ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

Green LEDs; InGaN GaN multiple quantum wells; Light emitting diodes; P type layers; Superlattices

Indexed keywords

ACTIVE REGION (AR); ALLOY COMPOSITIONS; CONTACT LAYERS; ELECTRON HOLES; GREEN LIGHT; HIGH EFFICIENCY; HIGH-BRIGHTNESS (HB); HOLE INJECTIONS; INDIUM CONTENT; INTERNAL QUANTUM EFFICIENCY (IQE); KEY ELEMENTS; LARGE LATTICE MISMATCH; LARGE STRAINS; LIGHTING SYSTEMS; MATERIAL QUALITY; MULTIPLE QUANTUM WELLS (MQWS); NITRIDE MATERIALS; OPTICAL (PET) (OPET); OPTICAL INSTRUMENTATION; P-INGAN; PIEZO-ELECTRIC FIELDS; STRUCTURAL CHARACTERISTICS;

ANNEALING; CUBIC BORON NITRIDE; ENERGY EFFICIENCY; EXTRATERRESTRIAL ATMOSPHERES; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HOLE TRAPS; INDIUM; INDIUM ALLOYS; INJECTION (OIL WELLS); LATTICE MISMATCH; LIGHT EMITTING DIODES; NITRIDES; PIEZOELECTRICITY; PIGMENTS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WAVE FUNCTIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42149094938     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.766915     Document Type: Conference Paper

References (17)

1. M. Krames, 2003 DOE Solid State Lighting Program Planning Workshop, November 13-14, Washington, D.C., (2003); http://www.netl.doe.gov/ssl/materials. html
2. M. D. McCluskey, L. T. Romano, B. S. Krusor, N. M. Johnson, T. Suski, and J. Jun, Appl. Phys. Lett. 73, 1281 (1998).
3. M. D. McCluskey, L. T. Romano, B. S. Krusor, D. P. Bohr, N. M. Johnson, and S. Brennan, Appl. Phys. Lett. 72, 1730 (1998).
4. C. C. Chou, C. M. Lee, and J. I. Chyi, Appl. Phys. Lett. 78, 314 (2001).
5. Wonseok Lee, Jae Limb, Jae-Hyun Ryou, Dongwon Yoo, Theodore Chung, and Russell Dupuis, J. Electron. Mater. 35, 587 (2006).
6. Wonseok Lee, Jae Limb, Jae-Hyun Ryou, Dongwon Yoo, Theodore Chung, and Russell Dupuis, J. Crystal Growth 287, 577 (2006).
7. J. B. Limb, W. Lee, J. H. Ryou, D. Yoo, and R. D. Dupuis, J. Electron. Mater. 36, 426 (2007).
8. Y. Chen, T. Takeuchi, H. Amano, I. Akasaki, N. Yamada, Y. Kaneko, and S. Y. Wang, Appl. Phys. Lett. 72, 710 (1998).
9. Ig-Hyeon Kim, Hyeong-Soo Park, Yong-Jo Park, and Taeil Kim, Appl. Phys. Lett. 73, 1634 (1998).
10. X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998).
11. K. Watanabe, J. R. Yang, S. Y. Huang, K. Inoke, J. T. Hsu, R. C. Tu, T. Yamazaki, N. Nakanishi, and M. Shiojiri, Appl. Phys. Lett. 82, 718 (2002).
12. J. P. Liu, Y. T. Wang, H. Yang, D. S. Jiang, U. Jahn, and P. K. Ploog, Appl. Phys. Lett. 84, 5449 (2004).
13. X. A. Cao, J. A. Teetsov, F. Shahedipour-Sandvik, and S. D. Arthur, J. Crystal Growth 264, 172 (2004).
14. Wonseok Lee, Jae Limb, Jae-Hyun Ryou, Dongwon Yoo, Mark Andrew Ewing, Yair Korenblit, and Russell D. Dupuis, J. Display Technology 3, 126 (2007).
15. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997).
16. J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, M. Stevens, and F. A. Ponce, Appl. Phys. Lett., (submitted for publication).
17. F. A. Ponce, S. Srinivasan, A. Bell, L. Geng, R. Liu, M. Stevens, J. Cai, H. Omiya, H. Marui, and S. Tanaka, Phys. Stat. Sol. B 240, 273-284 (2003).