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Volumn 6658, Issue , 2007, Pages

High performance organic field-effect transistors with fluoropolymer gate dielectric

Author keywords

Cyclic fluoropolymer; Electrical stability; Gate dielectric; Pentacene; Rubrene

Indexed keywords

FLUORINE CONTAINING POLYMERS; GATE DIELECTRICS; HYDROPHOBICITY; PERMITTIVITY; SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 42149087675     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.738522     Document Type: Conference Paper
Times cited : (4)

References (17)
  • 1
    • 8444231667 scopus 로고    scopus 로고
    • Gate insulators in organic field-effect transistors
    • J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, "Gate insulators in organic field-effect transistors," Chem. Mater. 16, pp. 4543-4555, 2004.
    • (2004) Chem. Mater , vol.16 , pp. 4543-4555
    • Veres, J.1    Ogier, S.2    Lloyd, G.3    de Leeuw, D.4
  • 2
    • 23044480892 scopus 로고    scopus 로고
    • Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics
    • A. Facchetti, M. H. Yoon, and T. J. Marks, "Gate dielectrics for organic field-effect transistors: New opportunities for organic electronics," Adv. Mater. 17, pp. 1705-1725, 2005.
    • (2005) Adv. Mater , vol.17 , pp. 1705-1725
    • Facchetti, A.1    Yoon, M.H.2    Marks, T.J.3
  • 3
    • 33751080600 scopus 로고    scopus 로고
    • High-performance microscale single-crystal transistors by lithography on an elastomer dielectric
    • C. Reese, W.-J. Chung, M.-M. Ling, M. Roberts, and Z. Bao, "High-performance microscale single-crystal transistors by lithography on an elastomer dielectric," Appl. Phys. Lett. 89, p. 202108, 2006.
    • (2006) Appl. Phys. Lett , vol.89 , pp. 202108
    • Reese, C.1    Chung, W.-J.2    Ling, M.-M.3    Roberts, M.4    Bao, Z.5
  • 4
    • 33847658220 scopus 로고    scopus 로고
    • Organic small molecule field-effect transistors with cytop(tm) gate dielectric: Eliminating gate bias stress effects
    • W. L. Kalb, T. Mathis, S. Haas, A. F. Stassen, and B. Batlogg, "Organic small molecule field-effect transistors with cytop(tm) gate dielectric: Eliminating gate bias stress effects," Appl. Phys. Lett. 90, p. 092104, 2007.
    • (2007) Appl. Phys. Lett , vol.90 , pp. 092104
    • Kalb, W.L.1    Mathis, T.2    Haas, S.3    Stassen, A.F.4    Batlogg, B.5
  • 5
    • 0037113669 scopus 로고    scopus 로고
    • Carrier transport and density of state distributions in pentacene transistors
    • A. R. Völkel, R. A. Street, and D. Knipp, "Carrier transport and density of state distributions in pentacene transistors," Phys. Rev. B 66, p. 195336, 2002.
    • (2002) Phys. Rev. B , vol.66 , pp. 195336
    • Völkel, A.R.1    Street, R.A.2    Knipp, D.3
  • 6
    • 33645502724 scopus 로고    scopus 로고
    • Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density
    • C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, and B. Batlogg, "Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density," J. Appl. Phys 99, p. 034507, 2006.
    • (2006) J. Appl. Phys , vol.99 , pp. 034507
    • Goldmann, C.1    Krellner, C.2    Pernstich, K.P.3    Haas, S.4    Gundlach, D.J.5    Batlogg, B.6
  • 7
    • 42149147557 scopus 로고    scopus 로고
    • A. G. Company, Cytop amorphous fluoropolymer technical data sheet.
    • A. G. Company, "Cytop amorphous fluoropolymer technical data sheet."
  • 8
    • 0037355810 scopus 로고    scopus 로고
    • Low-k insulators as the choice of dielectrics in organic field-effect transistors
    • J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, "Low-k insulators as the choice of dielectrics in organic field-effect transistors," Adv. Funct. Mater. 13, pp. 199-204, 2003.
    • (2003) Adv. Funct. Mater , vol.13 , pp. 199-204
    • Veres, J.1    Ogier, S.D.2    Leeming, S.W.3    Cupertino, D.C.4    Khaffaf, S.M.5
  • 9
    • 0242552083 scopus 로고    scopus 로고
    • Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals
    • J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, "Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals," J. Appl. Phys. 94, pp. 5800-5804, 2003.
    • (2003) J. Appl. Phys , vol.94 , pp. 5800-5804
    • Takeya, J.1    Goldmann, C.2    Haas, S.3    Pernstich, K.P.4    Ketterer, B.5    Batlogg, B.6
  • 10
    • 9344230404 scopus 로고    scopus 로고
    • Structure-performance relationship in pentacene/al2o3 thin-film transistors
    • W. Kalb, P. Lang, M. Mottaghi, H. Aubin, G. Horowitz, and M. Wuttig, "Structure-performance relationship in pentacene/al2o3 thin-film transistors," Synth. Metal. 146, pp. 279-282, 2004.
    • (2004) Synth. Metal , vol.146 , pp. 279-282
    • Kalb, W.1    Lang, P.2    Mottaghi, M.3    Aubin, H.4    Horowitz, G.5    Wuttig, M.6
  • 12
    • 0000034240 scopus 로고    scopus 로고
    • Gate voltage dependent mobility of oligothiophene field-effect transistors
    • G. Horowitz, R. Hajlaoui, D. Fichou, and A. El Kassmi, "Gate voltage dependent mobility of oligothiophene field-effect transistors," J. Appl. Phys. 85, pp. 3202-3206, 1999.
    • (1999) J. Appl. Phys , vol.85 , pp. 3202-3206
    • Horowitz, G.1    Hajlaoui, R.2    Fichou, D.3    El Kassmi, A.4
  • 13
    • 0021427789 scopus 로고
    • Physics of amorphous-silicon based alloy field-effect transistors
    • M. Shur and M. Hack, "Physics of amorphous-silicon based alloy field-effect transistors," J. Appl. Phys. 55, pp. 3831-3842, 1984.
    • (1984) J. Appl. Phys , vol.55 , pp. 3831-3842
    • Shur, M.1    Hack, M.2
  • 14
    • 32444436987 scopus 로고    scopus 로고
    • Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors
    • C. Goldmann, D. J. Gundlach, and B. Batlogg, "Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors," Appl. Phys. Lett. 88, p. 063501, 2006.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 063501
    • Goldmann, C.1    Gundlach, D.J.2    Batlogg, B.3
  • 16
    • 33644524077 scopus 로고    scopus 로고
    • Electrical instabilities in organic semiconductors caused by trapped supercooled water
    • H. L. Gomes, P. Stallinga, M. Cölle, D. M. de Leeuw, and F. Biscarini, "Electrical instabilities in organic semiconductors caused by trapped supercooled water," Appl. Phys. Lett. 88, p. 082101, 2006.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 082101
    • Gomes, H.L.1    Stallinga, P.2    Cölle, M.3    de Leeuw, D.M.4    Biscarini, F.5
  • 17
    • 33845439337 scopus 로고    scopus 로고
    • Modeling the water related trap state created in pentacene transistors
    • K. P. Pernstich, D. Oberhoff, C. Goldmann, and B. Batlogg, "Modeling the water related trap state created in pentacene transistors," Appl. Phys. Lett. 89, p. 213509, 2006.
    • (2006) Appl. Phys. Lett , vol.89 , pp. 213509
    • Pernstich, K.P.1    Oberhoff, D.2    Goldmann, C.3    Batlogg, B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.