Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 257-260

  Huang, Xinming ^a   Wu, Kehui ^a   Chen, Mingwei ^a   Toshinori, Taishi ^b   Hoshikawa, Keigo ^b   Koh, Shinji ^a   Uda, Satoshi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SHINSHU UNIVERSITY   (Japan)

Author keywords

Heavy B and Ge codoping; Raman spectroscopy; Si crystal

Indexed keywords

BORON; CONCENTRATION (PROCESS); GERMANIUM; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTOR DOPING; TEMPERATURE MEASUREMENT;

HEAVY B AND GE CODOPING; SI CRYSTALS; TEMPERATURE COEFFICIENTS; TEMPERATURE RANGE;

CRYSTAL STRUCTURE;

EID: 33744547524     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.050     Document Type: Article

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