Ferroelectric properties of Bi3.4Dy0.6Ti3O12 thin films crystallized in N2

Materials Letters

Volumn 62, Issue 16, 2008, Pages 2450-2453

  Cheng, C P ^a,b   Tang, M H ^b   Yang, J Y ^a   Deng, Y H ^a  

^a HUNAN INSTITUTE OF ENGINEERING   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

BDT ferroelectric thin films; Crystallization temperature; Remanent polarization

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTALLIZATION; DEPOSITION; FERROELECTRICITY; GRAIN SIZE AND SHAPE; REMANENCE;

CHEMICAL SOLUTION DEPOSITION; CRYSTALLIZATION TEMPERATURE; TEMPERATURE RANGE;

FERROELECTRIC THIN FILMS;

EID: 41949113909     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2007.12.018     Document Type: Article

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