Crystallization of SrBi2Ta2O9 thin films in N2 ambient by chemical solution deposition method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 A, 2001, Pages 2403-2407

  Ogata, N ^a   Nagata, M ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Annealing; Chemical solution deposition; Ferroelectric; Ferroelectric memory; Inert gas; N2; SrBi2Ta2O9; Thin film

Indexed keywords

ANNEALING; CALCINATION; COERCIVE FORCE; CRYSTALLIZATION; CURRENT DENSITY; FERROELECTRICITY; NITROGEN; PARTIAL PRESSURE; POLARIZATION; STRONTIUM COMPOUNDS;

CHEMICAL SOLUTION DEPOSITION (CSD); REMANENT POLARIZATION;

THIN FILMS;

EID: 0035301706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2403     Document Type: Article

References (12)