Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors

Applied Physics Letters

Volumn 89, Issue 8, 2006, Pages

  Chu Kung, B F ^a   Feng, M ^a   Walter, G ^a   Holonyak Jr , N ^a   Chung, T ^b   Ryou, J H ^b   Limb, J ^b   Yoo, D ^b   Shen, S C ^b   Dupuis, R D ^b   Keogh, D ^c   Asbeck, P M ^c  

^a University of Illinois at Urbana Champaign   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTOR (HBT); LIGHT-EMITTING TRANSISTORS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS;

HETEROJUNCTIONS;

EID: 33747815008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2336619     Document Type: Article

References (21)

1. M. Feng, N. Holonyak, Jr., and W. Hafez, Appl. Phys. Lett. 84, 151 (2004).
2. M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 84, 1952 (2004).
3. M. Feng, N. Holonyak, Jr., B. Chu-Kung, G. Walter, and R. Chan, Appl. Phys. Lett. 84, 4792 (2004).
4. F. Dixon, R. Chan, G. Walter, N. Holonyak, Jr., M. Feng, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, Appl. Phys. Lett. 88, 012108 (2006).
5. G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. Lett. 85, 4768 (2004).
6. R. Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. 86, 131114 (2005).
7. M. Feng, N. Holonyak, Jr., G. Walter, and R. Chan, Appl. Phys. Lett. 87, 131103 (2005).
8. M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. Phys. Lett. 88, 063509 (2006).
9. J. J. Huang, M. Hattendorf, M. Feng, D. J. H. Lambert, B. S. Shelton, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, and R. D. Dupuis, Electron. Lett. 36 (2000).
10. B. S. Shelton, D. J. H. Lambert, J. J. Huang, M. M. Wong, U. Chowdhury, T. G. Zhu, H. K. Kwon, Z. Liliental-Weber, M. Benamara, M. Feng, and R. D. Dupuis, IEEE Trans. Electron Devices 48, 490 (2001).
11. T. Makimoto, K. Kumakura, and N. Kobayashi, Appl. Phys. Lett. 79, 380 (2001).
12. S. Yoshida and J. Suzuki, J. Appl. Phys. 85, 11 (1999).
13. T. Makimoto, K. Kumakura, and N. Kobayashi, Appl. Phys. Lett. 83, 1035 (2003).
14. T. Makimoto, Y. Yamauchi, and K. Kumakura, Appl. Phys. Lett. 84, 1964 (2004).
15. T. Chung, J. Limb, D. Yoo, J.-H. Ryou, W. Lee, S.-C. Shen, R. D. Dupuis, B. Chu-Kung, M. Feng, D. Keogh, and P. Asbeck, Appl. Phys. Lett. 88, 183501 (2006).
16. ece-www.colorado.edu/~bart/ecen6355/simwindows
17. K. P. O'Donnell, I. Fernandez-Torrente, P. R. Edwards, and R. W. Martin, J. Cryst. Growth 269, 1 (2004).
18. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
19. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 13 (1997).
20. J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen, and K. K. Shih, Appl. Phys. Lett. 74, 9 (1999).
21. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys., Part l 30, 12 (1991).