Highly reliable 90-nm logic multitime programmable NVM cells using novel work-function-engineered tunneling devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2526-2530

  Wang, Bin ^a   Nguyen, Hoc ^a   Ma, Yanjun ^a   Paulsen, Ron ^a  

^a Impinj   (United States)

Author keywords

Defect generation rate; Endurance; Multitime programmable (MTP); Nonvolatile memory (NVM); Stressinduced leakage current (SILC); Work function engineered

Indexed keywords

ELECTRON TUNNELING; EMBEDDED SYSTEMS; LEAKAGE CURRENTS; MANUFACTURE; WORK FUNCTION;

MULTITIME PROGRAMABLE CELL; NONVOLATILE MEMORY; TUNNELING DEVICES;

NONVOLATILE STORAGE;

EID: 41749106247     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.903199     Document Type: Article

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