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Volumn 2, Issue , 2003, Pages 503-504
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Continuous wave operation of all monolithic 1.55 μm VCSELs with tunnel junction grown by MOCVD
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTINUOUS WAVE LASERS;
ETCHING;
LIGHT ABSORPTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MIRRORS;
MONOLITHIC INTEGRATED CIRCUITS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTING INDIUM PHOSPHIDE;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL CONDUCTIVITY;
TUNNEL JUNCTIONS;
III-V SEMICONDUCTORS;
INDIUM PHOSPHIDE;
NANOSTRUCTURES;
PHOTONICS;
SURFACE EMITTING LASERS;
CONTINUOUS WAVE OPERATION;
DISTRIBUTED BRAGG REFLECTOR;
MONOLITHIC VERTICAL CAVITY SURFACE EMITTING LASER;
SELECTIVE ETCHING;
SEMICONDUCTING INDIUM ALUMINUM ARSENIDE;
SEMICONDUCTING INDIUM ALUMINUM GALLIUM ARSENIDE;
SEMICONDUCTOR LASERS;
TUNNEL JUNCTIONS;
CONTINUOUS-WAVE OPERATIONS;
CURRENT EMISSIONS;
EMISSION MAXIMA;
EMISSION WAVELENGTH;
INP;
INTRACAVITIES;
LATTICE-MATCHED;
LIGHT OUTPUT POWER;
MONOLITHICS;
THRESHOLD CURRENTS;
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EID: 0344897698
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (3)
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