1.1 mW single-mode output power of all-monolithic 1.3 μm InAlGaAs/InP vertical cavity surface emitting lasers grown by metal organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

  Park, Mi Ran ^a   Kwon, O Kyun ^a   Yoo, Byueng Su ^b   Lee, Ki Hwang ^b   Song, Hyun Woo ^a   Han, Won Seok ^a   Park, Sang Hee Ko ^a   Kim, Jong Hee ^a   Park, Seong Joo ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b RayCan Co Ltd   (South Korea)

Author keywords

InAlGaAs; InP; Long wavelength; Metal organic chemical vapor deposition (MOCVD); Monolithic; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

BANDWIDTH; DATA COMMUNICATION EQUIPMENT; ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; TUNNEL DIODE AMPLIFIERS; WAVELENGTH DIVISION MULTIPLEXING;

INALGAAS; INP; LONG WAVELENGTHS; MONOLITHIC; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17444380501     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L101     Document Type: Article

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