Near room-temperature continuous-wave operation of all-monolithic InAlGaAs/InP 1.3 μm VCSELs

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 664-665

  Shin, Jae Heon ^a   Kim, Jong Hee ^a   Song, Hyun Woo ^a   Han, Il Young ^a   Ju, Young Gu ^a   Han, Won Seok ^a   Kwon, O Kyun ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

CONTINUOUS WAVE OPERATIONS;

SEMICONDUCTOR LASERS;

EID: 0038004121     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030456     Document Type: Article

References (7)

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2. YAMADA, M., ANAN, T., KURIHARA, K., NISHI, K., TOKU TOME, K., KAMER, A. and SUGOU, S.: 'High-performance 1.3-μm VCSELs with GaAsSb/GaAs quantum wells', LFOS 2001 Annual Mtg. Conf. Proc., San Diego. CA. USA, 2001, pp. 598-599
3. LOTT, J.A. LEDENTSOV, N.N., USTINOV, V.M., MALEEV N.A., ZHUKOV, A.E., KOVSH, A.R., MAXIMOV, M.A., VOLOVIK, B.V., ALFEROV, ZH.L, and BIMBERG, D.: InAs-InCaAs quantum dot VCSELs on GaAs substrates, emitting at 1.3 μm', Electron. Lett. 2000, 36, pp. 1384-1385
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5. UCHIYAMA, S. YOKOUCHI, N., and NINOMIYA, E.: 'Continuous-wave operation up to 36 C of 1.3-μm CalnAsP-lnP vertical-cavity surfuce-emitting lasers', IEEE Photomics Technol. Lett., 1997, 9, pp. 141-142
6. JU, Y.-G. HAHN, W.-S. SHIN, J.-H., KIM, J.-H., ROH, J.-R., KWON, O.-K., and YOO, B.S.: '1.3 μm vertical-cavity surface-emitting lasers using heavy ion implantation and dielectric mirror', Jpn. J. Appl. 2002, 41, pp. L1370-L1372
7. COLDREN, L.N.: 'Advances in vertical-cavity and widely-tunable laser, using InP-based PIC technology', LEOS 2002 Annual Mtg. Conf. Proc. Glasgow, Scotland, UK, 2002, pp. 5-6