Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters

Volumn 16, Issue 4, 2004, Pages 963-965

  Louderback, D A ^a   Fish, M A ^a   Klem, J F ^b   Serkland, D K ^b   Choquette, K D ^c   Pickrell, G W ^a   Stone, R V ^a   Guilfoyle, P S ^a  

^a OptiComp Corporation   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

1300 nm; Bottom emitting; Flip chip; InGaAsN; Optical communications; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

FLIP CHIP DEVICES; OPTICAL COMMUNICATION; OXIDES; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

GALLIUM INDIUM NITRIDE ARSENIDE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 1942468662     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.824614     Document Type: Article

References (8)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 1273-1275, 1996.
2. K. D. Choquette, J. F. Klem, A. J. Fischer, O. Blum, A. A. Allerman, I.J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, and R. L. Naone, "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm," Electron. Lett., vol. 36, pp. 1388-1390, 2000.
3. A. W. Jackson, R. L. Naone, M. J. Dalbearth, J. M. Smith, K. J. Malone, D. W. Kisker, J. F. Klem, K. D. Choquette, D. K. Serkland, and K. M. Geib, "OC-48 capable InGaAsN vertical cavity lasers," Electron. Lett., vol. 37, pp. 355-356, 2001.
4. C. S. Murray, F. D. Newman, S. Sun, J. B. Clevenger, D. J. Bossert, C. X. Wang, H. Q. Hou, and R. Stall, "Development of 1.3 micron oxide-confined VLSELs grown by MOCVD," Proc. SPIE, vol. 4649, pp. 31-38, 2002.
5. L. R. Thompson, L. M. F. Chirovsky, A. W. Jackson, R. L. Naone, D. Galt, S. R. Prakash, S. A. Feld, M. V. Crom, J. G. Wasserbauer, M. D. Lange, B. Mayer, and D. W. Kisker, "Performance of monolithic 1.3 μm VCSELs in telecom applications," Proc. SPIE, vol. 4649, pp. 25-30, 2002.
6. M. Grabherr, D. Wiedenmann, R. King, R. Jäger, and B. Schneider, "Speed it up to 10 Gb/s and flip chip it: VCSELS today," Proc. SPIE, vol.4649, pp. 11-18, 2002.
7. J. F. Klem, D. K. Serkland, and K. M. Geib, "Growth temperature and composition effects in InGaAsN quantum wells for GaAs-based 1300 nm emitters," presented at the Conf. Lasers and Electro-Optics (CLEO), Long Beach, CA, 2002.
8. D. I. Babic, J. Piprek, K. Streubel, R. P. Mirin, N. M. Margalit, D. E. Mars, J. E. Bowers, and E. L. Hu, "Design and analysis of double-fused 1.55-μm vertical-cavity lasers," IEEE J. Quantum Electron., vol. 33, pp. 1369-1383, Aug. 1997.