MBE growth of InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 821-824

  Hashimoto, Takayuki ^a   Oshima, Ryuji ^a   Shigekawa, Hidemi ^a   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SELF ASSEMBLY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EMBEDDED QUANTUM DOTS; HYDROGEN-ASSISTED MOLECULAR BEAM EPITAXY (H-MBE); LOW DIMENSIONAL STRUCTURES; STRAIN COMPENSATING LAYER (SCL);

SEMICONDUCTOR GROWTH;

EID: 33947314139     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.059     Document Type: Article

References (11)

1. Arakawa Y., and Sakaki H. Appl. Phys. Lett. 40 (1982) 939
2. Meirav U., and Foxman E.B. Semicond. Sci. Technol. 11 (1996) 255
3. Nozik A.J. Physica E 14 (2002) 115
4. Mukai K., and Sugawara M. Appl. Phys. Lett. 74 (1999) 3963
5. Akahane K., Yamamoto N., and Ohtani N. Physica E 21 (2004) 295
6. Oshima R., Hashimoto T., Shigekawa H., and Okada Y. Physica E 32 (2006) 77
7. Shimizu Y., Kobayashi N., Uedono A., and Okada Y. J. Crystal Growth 278 (2005) 553
8. Spruytte S.G., Larson M.C., Wampler W., Coldren C.W., Petersen H.E., and Harris J.S. J. Crystal Growth 227 (2001) 506
9. J.I. Pankove, Optical Processes in Semiconductors, Dover Publications, Inc., New York.
10. Gupta J.A., Wasilewski Z.R., Riel B.J., Ramsey J., Aers G.C., Williams R.L., Sproule G.I., Perovic A., Perovic D.D., Garanzotis T., and Springthorpe A.J. J. Crystal Growth 242 (2002) 141
11. Heitz R., Kalburge A., Xie Q., Grundmann M., Chen P., Hoffmann A., Madhukar A., and Bimberg D. Phys. Rev. B 57 (1998) 9050