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Volumn 3, Issue 3, 2006, Pages 614-618
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First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
HETEROJUNCTIONS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTICAL WAVEGUIDES;
STRUCTURAL ANALYSIS;
X RAY DIFFRACTION ANALYSIS;
MATERIALS SCIENCE;
NITRIDES;
ORGANOMETALLICS;
QUANTUM WELL LASERS;
SINGLE CRYSTALS;
ELECTRICAL INJECTION LASING;
LASER DEVICES;
QUANTUM WELL HETEROSTRUCTURES (QWH);
SEMICONDUCTING GALLIUM COMPOUNDS;
GALLIUM ALLOYS;
BROAD-AREA LASERS;
CRYSTALLINE PERFECTION;
ELECTRICAL INJECTION;
HIGH RESOLUTION;
LOW TEMPERATURES;
METAL-ORGANIC VAPOUR PHASE EPITAXY;
NOVEL MATERIAL SYSTEM;
QUANTUM WELL HETEROSTRUCTURES;
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EID: 33646184351
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200564124 Document Type: Conference Paper |
Times cited : (33)
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References (5)
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