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Volumn 121, Issue 2 SPEC. ISS., 2006, Pages 361-364
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Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
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Author keywords
Dilute nitride; GaP based laser; Integrated optoelectronic circuits
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Indexed keywords
BAND STRUCTURE;
INTEGRATED CIRCUITS;
LUMINESCENCE;
NITRIDES;
OPTOELECTRONIC DEVICES;
TRANSMISSION ELECTRON MICROSCOPY;
EMISSION WAVELENGTH;
GAP-BASED LASERS;
MATERIAL SYSTEM;
STRUCTURAL DEGRADATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 33750365118
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2006.08.074 Document Type: Article |
Times cited : (30)
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References (16)
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