Partly three-dimensional global modeling of a silicon Czochralski furnace. II. Model application: Analysis of a silicon Czochralski furnace in a transverse magnetic field

International Journal of Heat and Mass Transfer

Volumn 48, Issue 21-22, 2005, Pages 4492-4497

  Liu, Lijun ^a   Kakimoto, Koichi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Computer simulation; Czochralski method; Global modeling; Semiconducting silicon; Transverse magnetic field

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; HEAT TRANSFER; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTING SILICON;

CZOCHRALSKI METHOD; GLOBAL MODELING; SILICON CZOCHRALSKI (CZ) FURNACE; TRANSVERSE MAGNETIC FIELD;

FURNACES;

FURNACE;

EID: 23844458628     PISSN: 00179310     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijheatmasstransfer.2005.04.030     Document Type: Article

References (7)

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3. K. Kakimoto Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt J. Cryst. Growth 237-239 2002 1785 1790
4. H. Ozoe, and M. Iwamoto Combined effects of crucible rotation and horizontal magnetic field on dopant concentration in a Czochralski melt J. Cryst. Growth 142 1994 236 244
5. A. Krauze, A. Muiznieks, A. Muhlbauer, Th. Wetzel, and W.v. Ammon Numerical 3D modeling of turbulent melt flow in a large CZ system with horizontal DC magnetic field, I: flow structure analysis J. Cryst. Growth 262 2004 157 167
6. A. Krauze, A. Muiznieks, A. Muhlbauer, Th. Wetzel, E. Tomzig, L. Gorbunov, A. Pedchenko, and J. Virbulis Numerical 3D modeling of turbulent melt flow in a large CZ system with horizontal DC magnetic field, II: comparison with measurements J. Cryst. Growth 265 2004 14 27
7. L.J. Liu, K. Kakimoto, Partly three-dimensional global modeling of a silicon Czochralski furnace I. Principles, Formulation and Implementation of the Model, Int. J. Heat Mass Transfer, in press doi:10.1016/j.ijheatmasstransfer. 2005.04.031.