Physics-based device models for nanoscale double-gate MOSFETs

2004 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2004, Pages 73-79

  Chen, Qiang ^b   Wang, Lihui ^a   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; POISSON EQUATION; PROCESS CONTROL; THRESHOLD VOLTAGE;

DOUBLE-GATE (DG); FRINGE-INDUCED BARRIER LOWERING (FIBL); GROUND-PLANE (GP); SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 4143134355     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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