1.55 μm InAs/InAlGaAs quantum Dot DFB lasers

IEEE Transactions on Nanotechnology

Volumn 7, Issue 2, 2008, Pages 128-130

  Kim, Jin Soo ^a   Lee, Cheul Ro ^a   Kwack, Ho Sang ^b   Choi, Byung Seok ^b   Sim, Eundeuk ^b   Lee, Chul Wook ^b   Oh, Dae Kon ^b  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

1.55 m; Characteristic temperature; Laser; Quantum dot; Single mode operation

Indexed keywords

CURRENT DENSITY; DIFFRACTION GRATINGS; EPITAXIAL GROWTH; LASERS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

CHARACTERISTIC TEMPERATURE; SINGLE MODE OPERATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 41149160670     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.907254     Document Type: Conference Paper

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