The proximity effect of the regrowth interface on two-dimensional electron density in strained Si

Applied Physics Letters

Volumn 92, Issue 11, 2008, Pages

  Liu, J ^a   Lu, T M ^b   Kim, J ^a   Lai, K ^b   Tsui, D C ^b   Xie, Y H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EPILAYERS; HETEROJUNCTIONS; SHEET METAL; THERMAL EFFECTS; TWO DIMENSIONAL;

REGROWTH INTERFACES; SHEET DENSITY; TEMPERATURE VARIATION;

ELECTRON GAS;

EID: 41049113803     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2899937     Document Type: Article

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